Three-dimensional MMIC technology for low-cost millimeter-wave MMICs

IEEE Journal of Solid-State Circuits

Volumn 36, Issue 9, 2001, Pages 1351-1359

  Nishikawa, K ^a   Kamogawa, K ^a   Piernas, B ^a   Tokumitsu, M ^a   Sugitani, S ^a   Toyoda, I ^a   Araki, K ^a  

^a NTT Network Innovation Laboratories   (Japan)

Author keywords

Flexible development; GaAs; Highly integration; Millimeter wave; Miniaturization; MMIC; Multilayer; Si; Three dimensio nal; Turn around time

Indexed keywords

MILLIMETER WAVE DEVICES; MULTILAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SUBSTRATES; TURNAROUND TIME;

FREQUENCY BANDS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0035442060     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.944662     Document Type: Article

References (18)

1. Highly integrated three-dimensional MMIC single-chip receiver and transmitter
2. Highly integrated three-dimensional MMIC technology applied to novel masterslice GaAs- and Si-MMICs
3. Three-dimensional passive circuit technology for ultra-compact MMICs
4. A compact V-band 3-D MMIC single-chip down-converter using photosensitive BCB dielectric film
5. Miniaturized millimeter-wave masterslice 3-D MMIC amplifier and mixer
6. Symmetric and asymmetric InGaP/InGaAs/GaAs heterostructure MESFET and their application to V-band amplifiers
7. High-yield design technologies for InAlAs/InGaAs/InP-HEMT analog-digital ICs
8. Three-dimensional MMIC technology for low-cost millimeter-wave MMICs
9. Application of SiGe heterojunction bipolar transistors in 5.8 GHz and 10 GHz low-noise amplifiers
10. X- and Ku-band amplifiers based on Si/SiGe HBT's and micromachined lumped components
11. 26 GHZ Coplanar SiGe MMICs
12. Ku-band Si MOSFET monolithic amplifiers with low-loss on-chip matching networks
13. 4- and 13-GHz tuned amplifiers implemented in a 0.1-μm CMOS technology on SOI, SOS, and bulk substrates
14. Three-dimensional silicon MMIC's operating up to K-band
15. New methodology for microwave/millimeter-wave MMIC development
16. 0.15 μm T-shaped gate fabrication for GaAs MODFET using phase shift lithography
17. A broadband and miniaturized V-hand PHEMT frequency doubler