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Volumn 3, Issue , 2000, Pages 1913-1916

New methodology for microwave/millimeter-wave MMIC development

Author keywords

[No Author keywords available]

Indexed keywords

THIN POLYIMIDE INTERCONNECTION TECHNOLOGY; THREE DIMENSIONAL MULTILAYER INTERCONNECTION PROCESS;

EID: 0033724439     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article
Times cited : (5)

References (4)
  • 1
    • 0031237392 scopus 로고    scopus 로고
    • Highly integrated three-dimensional MMIC techndogy appiled to novel masterslice GaAs- and Si-MMIC's
    • Sept.
    • T. Tokumitsu, M. Hirano, K. Yamasaki, C. Yamaguchi, K. Nishikawa, and M. Aikawa, "Highly Integrated Three-Dimensional MMIC Techndogy Appiled to Novel Masterslice GaAs- and Si-MMIC's," IEEE Journal of Solid State Circuits, Vol. 32, No. 9, pp. 1334-1341, Sept. 1997.
    • (1997) IEEE Journal of Solid State Circuits , vol.32 , Issue.9 , pp. 1334-1341
    • Tokumitsu, T.1    Hirano, M.2    Yamasaki, K.3    Yamaguchi, C.4    Nishikawa, K.5    Aikawa, M.6
  • 2
    • 0032204178 scopus 로고    scopus 로고
    • Three-dimensional monolithic microwave integrated circuit technology for fully computer-aided design-compatible monolithic microwave integrated circuit development
    • Nov.
    • K. Nishikawa, I. Toyoda, K. Kamogawa, T. Tokumitsu, and M. Tanaka, "Three-Dimensional Monolithic Microwave Integrated Circuit Technology for Fully Computer-Aided Design-Compatible Monolithic Microwave Integrated Circuit Development, International Journal of RF and Microwave CAE, Vol. 8, No. 6, pp. 498-506, Nov. 1998
    • (1998) International Journal of RF and Microwave CAE , vol.8 , Issue.6 , pp. 498-506
    • Nishikawa, K.1    Toyoda, I.2    Kamogawa, K.3    Tokumitsu, T.4    Tanaka, M.5
  • 3
    • 0030083772 scopus 로고    scopus 로고
    • 0.15μm T-sharped Gate Fabrication for GaAs MODFET using phase shift lithography
    • Feb.
    • H. Takenaka and D. Ueda, "0.15μm T-sharped Gate Fabrication for GaAs MODFET Using Phase Shift Lithography," IEEE Trans. Electron Devices, Vol. 43, No. 2, pp. 238-244, Feb. 1996.
    • (1996) IEEE Trans. Electron Devices , vol.43 , Issue.2 , pp. 238-244
    • Takenaka, H.1    Ueda, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.