Application of SiGe heterojunction bipolar transistors in 5.8 and 10GHz low-noise amplifiers

Electronics Letters

Volumn 34, Issue 15, 1998, Pages 1498-1500

  Erben, U ^a   Schumacher, H ^a   Schuppen, A ^b   Arndt, J ^b  

^a UNIVERSITY OF ULM   (Germany)

^b Temic TELEFUNKEN Microlectron GmbH ^*  (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

NOISE FIGURE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032121292     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981019     Document Type: Article

References (6)

1. FRIIS, H.T.: 'Noise figure of radio receivers', Proc. IRE, 1944, 32, (7), pp. 419-122
2. SCHUMACHER, H., ERBEN, U., and GRUHLE, A.: 'Low-noise performance of SiGe heterojunction bipolar transistors'. Proc. Microwave and Millimeter-Wave Monolithic Circuit Symp., 1993, pp. 213-216
3. ERBEN, U., SCHÜPPEN, A., DIETRICH, H., and SCHUMACHER, H.: 'Low-noise amplifier for mobile communications using a production ready SiGe HBT technology'. Proc. ESSDERC, 1997, pp. 352-355
4. SOYUER, M., PLOUCHARD, J.-L., AINSPAN, H., and BURGHARTZ, J.: 'A 5.8-GHz 1-V low-noise amplifier in SiGe bipolar technology'. Proc. IEEE MTT-Symp., 1997, (Session RF02), pp. 19-22
5. SCHÜPPEN, A., DIETRICH, H., GERLACH, S., KÖHNEMANN, H., ARNDT, J., SEILER, U., GÖTZFRIED, R., ERBEN, U., and SCHUMACHER, H.: 'SlGe-technology and components for mobile communication systems'. Proc. BCTM, 1996, pp. 130-133
6. SCHUMACHER, H., ERBEN, U., and DÜRR, W.: 'SiGe heterojunction bipolar transistors - the noise perspective', Solid-State Electron., 1997, 41, (10), pp. 1485-1492