Plasma characteristics observed through high-aspect-ratio holes in C4F8 plasma

Plasma Sources Science and Technology

Volumn 5, Issue 2, 1996, Pages 121-125

  Kurihara, K ^a   Sekine, M ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ELECTRODES; FLUOROCARBONS; ION SOURCES; MAGNETRONS; PLASMA ETCHING; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR PLASMAS;

ION ENERGY DISTRIBUTION; MAGNETRON ETCHERS;

PLASMA SOURCES;

EID: 0030134285     PISSN: 09630252     EISSN: None     Source Type: Journal    
DOI: 10.1088/0963-0252/5/2/002     Document Type: Article

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