Impurity-free interdiffusion in GaAs/Al 0.54Ga 0.46As multiple quantum wells capped with PECVD SiO x: Effect of nitrous oxide flow

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Volumn , Issue , 1999, Pages 361-364

  Deenapanray, P N K ^a   Tan, H H ^a   Lengyel, J ^a   Durandet, A ^a   Gal, M ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

NITROUS OXIDE FLOW;

DIFFUSION IN SOLIDS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032641127     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (10)