Influence of SiOx capping layer quality on impurity-free interdiffusion in GaAs/AlGaAs quantum wells

Materials Research Society Symposium - Proceedings

Volumn 607, Issue , 2000, Pages 491-502

  Deenapanray, P N K ^a   Tan, H H ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DIELECTRIC MATERIALS; INTERDIFFUSION (SOLIDS); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROSITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS; SILANES;

ALUMINUM GALLIUM ARSENIDE; IMPURITY-FREE INTERDIFFUSION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033700103     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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