Dependence of dielectric-cap quantum-well disordering of GaAs-AlGaAs quantum-well structure on the hydrogen content in SiN x capping layer

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 4, 1998, Pages 624-628

  Choi, W J ^a,b,c   Han, S M ^d   Shah, S I ^c   Choi, S G ^c   Woo, D H ^c   Lee, S ^c   Kim, S H ^c   Lee, J I ^c   Kang, K N ^a,c   Cho, J ^d  

^a IEEE   (United States)

^b University of California   (United States)

^c Korea Institute of Science and Technology   (South Korea)

^d Kwangwoon University   (South Korea)

Author keywords

Hydrogen content in capping layer; Quantum well disordering; Semiconductor process

Indexed keywords

AMMONIA; COMPOSITION EFFECTS; FILM GROWTH; HYDROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON NITRIDE;

ALUMINUM GALLIUM ARSENIDE; QUANTUM-WELL DISORDERING (QWD);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032119765     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.720472     Document Type: Article

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