The influence of polysilicon gate morphology on dopant activation and deactivation kinetics in deep-submicron CMOS transistors

Materials Science in Semiconductor Processing

Volumn 4, Issue 4, 2001, Pages 351-356

  Cubaynes, F N ^a   Stolk, P A ^a   Verhoeven, J ^a   Roozeboom, F ^a   Woerlee, P H ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Amorphous silicon; Boron penetration; Gate deactivation; Gate depletion; Hall effect; Polysilicon; Spike annealing

Indexed keywords

AMORPHOUS SILICON; CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; GATES (TRANSISTOR); HALL EFFECT; ION IMPLANTATION; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING;

BORON PENETRATION; DOPANT ACTIVATION; DOPANT DEACTIVATION; GATE MORPHOLOGY; SPIKE ANNEALING;

POLYSILICON;

EID: 0035427732     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00173-6     Document Type: Article

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