Dopant profile and defect control in ion implantation by RTA with high ramp-up rate

Materials Chemistry and Physics

Volumn 54, Issue 1-3, 1998, Pages 49-53

  Saito, S ^a   Shishiguchi, S ^a   Hamada, K ^a   Hayashi, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Dislocation; Enhanced diffusion; High energy; Ion implantation; Low energy; RTA

Indexed keywords

ANNEALING; DIFFUSION; IONS; LEAKAGE CURRENTS; POINT DEFECTS; SEMICONDUCTOR JUNCTIONS;

ENHANCED DIFFUSION; HIGH RAMP UP RATE;

ION IMPLANTATION;

EID: 0032116565     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(98)00015-7     Document Type: Article

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