Ultra-shallow junction technology for 100 nm CMOS: xR LEAP implanter and RTP-centura rapid thermal annealer

Materials Chemistry and Physics

Volumn 54, Issue 1-3, 1998, Pages 33-36

  Current, Michael I ^a,c   Lopes, David ^a   Foad, Majeed ^b   Boyd Jr , Wendell ^a  

^a APPLIED MATERIALS INC   (United States)

^b Applied Materials   (United Kingdom)

^c MS 2954   (United States)

Author keywords

Rapid thermal annealing; Shallow junctions

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; ION IMPLANTATION; RANDOM ACCESS STORAGE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTOR JUNCTIONS; TECHNOLOGY; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

LOW ENERGY ADVANCED PROCESS; RTP-CENTURA RAPID THERMAL ANNEALER; SHALLOW JUNCTIONS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0032116653     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(98)00066-2     Document Type: Article

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