Kinetics and morphological stability in sublimation growth of 6H and 4H SiC epitaxial layers

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 161-164

  Syvajarvi M ^a   Yakimova, R ^a,b   Kakanakova Georgieva, A ^a,c   MacMillan, M F ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Okmetic AB   (Sweden)

^c UNIVERSITY OF SOFIA   (Bulgaria)

Author keywords

Epitaxy; Growth rate; Kinetics; Morphology; SiC; Sublimation

Indexed keywords

FREE MOLECULAR TRANSPORT; SUBLIMATION GROWTH;

ACTIVATION ENERGY; EPITAXIAL GROWTH; MOLECULAR DYNAMICS; MORPHOLOGY; PRESSURE EFFECTS; REACTION KINETICS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBLIMATION; SUBSTRATES; SURFACE ROUGHNESS;

SILICON CARBIDE;

EID: 0032691094     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00493-0     Document Type: Article

References (6)

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