Fabrication of microcrystalline silicon TFTs using a high-density plasma approach

IEEE Electron Device Letters

Volumn 22, Issue 8, 2001, Pages 399-401

  Krishnan, Anand T ^b,c,d   Bae, Sanghoon ^a,b,c,d   Fonash, Stephen J ^a,b,c,d  

^a IEEE

^b TEXAS INSTRUMENTS   (United States)

^c Alpha Industries   (United States)

^d PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

ECR; High density plasmas; Linear field effect mobility; Microcrystalline silicon thin film transistors

Indexed keywords

DRY ETCHING; ELECTRON CYCLOTRON RESONANCE; ELECTRON MOBILITY; LEAKAGE CURRENTS; MASKS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SILICA; THRESHOLD VOLTAGE; X RAY DIFFRACTION ANALYSIS;

HIGH-DENSITY PLASMAS (HDP);

THIN FILM TRANSISTORS;

EID: 0035425242     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.936356     Document Type: Article

References (15)

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