Chemical bonding and stability of 50 °C plasma-deposited silicon nitrides

Electrochemical and Solid-State Letters

Volumn 3, Issue 1, 2000, Pages 41-43

  Sanghoon, Bae ^a   Farber, David G ^b   Fonash, Stephen J ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CHEMICAL BONDS; DIELECTRIC FILMS; ELECTRIC BREAKDOWN OF SOLIDS; ENCAPSULATION; INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; PLASMA SOURCES; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON CYCLOTRON RESONANCE (ECR) PLASMAS;

SILICON NITRIDE;

EID: 0342960923     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390952     Document Type: Article

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