High-integrity ultra-thin silicon nitride film grown at low temperature for extending scaling limit of gate dielectric

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 115-116

  Sekine, Katsuyuki ^a   Saito, Yuji ^a   Hirayama, Masaki ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; ELECTRON TRAPS; FILM GROWTH; LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; PLASMA DENSITY; PLASMAS; SILICON NITRIDE; SLOT ANTENNAS; VAPOR DEPOSITION;

HIGH DENSITY PLASMA SYSTEM; JET VAPOR DEPOSITION; RADIAL LINE SLOT ANTENNA;

ULTRATHIN FILMS;

EID: 0033280062     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)