Breakdown and anti-breakdown events in high-field stressed ultrathin gate oxides

Solid-State Electronics

Volumn 45, Issue 8, 2001, Pages 1327-1332

  Miranda, E ^a   Sune J ^b   Rodriguez R ^b   Nafria M ^b   Aymerich, X ^b  

^a UNIVERSIDAD DE BUENOS AIRES   (Argentina)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Dielectric breakdown; MOS electron devices; Oxide reliability; Silicon dioxide

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOS DEVICES; POINT CONTACTS; SILICA;

CURRENT-INDUCED ATOMIC MOTIONS;

ULTRATHIN FILMS;

EID: 0035417348     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00262-8     Document Type: Article

References (40)