Intersubband transitions and ultrafast all-optical modulation using multiple InGaAs-AlAsSb-InP coupled double-quantum-well structures

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 7, Issue 4, 2001, Pages 710-717

  Neogi, A ^a,b,c   Yoshida, H ^b   Mozume, T ^b   Georgiev, N ^b   Wada, O ^a,b  

^a IEEE   (United States)

^b WASEDA UNIVERSITY   (Japan)

^c DUKE UNIVERSITY   (United States)

Author keywords

All optical modulation; Antimonides; InGaAs; Intersubband transitions; Semiconductor quantum wells; Ultrafast relaxation

Indexed keywords

ANTIMONIDES; INTERSUBBAND ELECTRON TRANSITIONS; OPTICAL COMMUNICATION WAVELENGTH; ULTRAFAST ALL-OPTICAL MODULATION;

ELECTRON TRANSITIONS; LIGHT ABSORPTION; LIGHT MODULATION; OPTICAL COMMUNICATION; OPTICAL SWITCHES; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035410177     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.974243     Document Type: Article

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