Absorption saturation of near-infrared intersubband transition in lattice-matched InGaAs/AlAsSb quantum wells

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 1, 2000, Pages 183-186

  Neogi, A ^a,b   Yoshida, H ^a   Mozume, T ^a   Georgiev, N ^a,b   Akiyama, T ^a   Wada, O ^a  

^a WASEDA UNIVERSITY   (Japan)

^b New Energy and Industrial Technology Development Organization   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON ABSORPTION; ELECTRON TRANSITIONS; ENERGY GAP; HETEROJUNCTIONS; LIGHT SOURCES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ABSORPTION SATURATION; BAND GAP; INTERBAND TWO PHOTON TRANSITIONS; LATTICE MATCHING; NEAR INFRARED INTERSUBBAND TRANSITION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033891220     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00283-0     Document Type: Article

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