Near-infrared wavelength intersubband transitions in high indium content InGaAs/AIAs quantum wells grown on GaAs

Electronics Letters

Volumn 33, Issue 9, 1997, Pages 818-820

  Sung, B ^a   Chui, H C ^b   Fejer, M M ^c   Harris Jr , J S ^a  

^a STANFORD UNIVERSITY   (United States)

^b STANFORD UNIVERSITY   (United States)

^c Hewlett Packard Optoelectronics Div   (United States)

Author keywords

Gallium arsenide; Semiconductor quantum wells

Indexed keywords

INFRARED RADIATION; MONOLAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

INTERSUBBAND TRANSITION; LINEARLY GRADED BUFFER TECHNIQUE; NEAR INFRARED WAVELENGTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031124552     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970514     Document Type: Article

References (7)

1. LIU, H.C., LEVINE, B.F., and ANDERSSON, J.Y. (Eds.): 'Quantum well intersubband transition physics and devices' (Kluwer Academic Publishers, Dordrecht/Boston/London), 1994
2. FAIST, J., CAPASSO, F., SIVCO, D.L., SIRTORI, C., HUTCHINSON, A.L., and CHO, A.Y.: 'Quantum cascade laser', Science, 1994, 264, pp. 553-556
3. SMET, J.H., PENG, L.H., HIRAYAMA, Y., and FONSTAD, C.G.: 'Electron intersubband transitions to 0.8eV (1.55μm) in InGaAslAlAs single quantum wells', Appl. Phys. Lett., 1994, 64, pp. 986-987
4. ASANO, T., NODA, S., ABE, T., and SASAKI, A.: 'Near-infrared intersubband transitions in InGaAs/AlAs quantum wells on GaAs substrate', Jpn. J. Appl. Phys., 1996, 35, pp. 1285-1291
5. LORD, S.M., PEZESHKI, B., and HARRIS, J.S., Jr.: 'Investigation of high In content InGaAs quantum wells grown on GaAs by molecular beam epitaxy', Electron. Lett., 1992, 28, pp. 1193-1195
6. 0.5As/ AlGaAs quantum wells grown on GaAs with a linearly graded InGaAs buffer', J. Vac. Sci. Tech. B, 1994, 12, pp. 1019-1022
7. CHUI, H.C., MARTINET, E.L., FEJER, M.M., and HARRIS, J.S., Jr.: 'Short wavelength intersubband transitions in InGaAs/AlGaAs quantum wells grown on GaAs', Appl. Phys. Lett., 1994, 64, pp. 736-738