Temperature-insensitive intersubband-transitions in InGaAs/AlAsSb multiple quantum well designed for optical communication wavelength

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 6 A, 2001, Pages

  Neogi, Arup ^a,b   Yoshida, Haruhiko ^a   Mozume, Teruo ^a   Georgiev, Nikholai ^a   Wada, Osamu ^a  

^a WASEDA UNIVERSITY   (Japan)

^b DUKE UNIVERSITY   (United States)

Author keywords

Antimonides; Intersubband transition; Optical switches; Semiconductor quantum well; Temperature dependence

Indexed keywords

ELECTRON TRANSITIONS; GROUND STATE; OPTICAL COMMUNICATION; OPTICAL SWITCHES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMAL EFFECTS;

INTERSUBBAND-TRANSITIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035358326     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l558     Document Type: Article

References (19)