Very low saturation intensity and ultrafast response of 1.5 μm intersubband absorption in n-doped InGaAs/AlAsSb MQW

Electronics Letters

Volumn 36, Issue 4, 2000, Pages 362-364

  Akiyama, T ^a   Neogi, A ^a   Yoshida, H ^a   Wada, O ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ADDITION REACTIONS; COMPOSITION EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

INTERSUBBAND ABSORPTION; INTERSUBBAND TRANSITION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033882165     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000306     Document Type: Article

References (3)

1. VODOPYANOV, K.L., CHAZAPIS, V., PHILLIPS, C.C., SUNG, B., and HARRIS, J.S., Jr.: 'Intersubband absorption saturation study of narrow III-V multiple quantum wells in the λ = 2.8-9μm spectral range', Semicond. Sci. Technol., 1997, 12, pp. 708-718
2. ASANO, T., and NODA, S.: 'Relaxation time of short wavelength intersubband transition in InGaAs/AIAs quantum wells', Jpn. J. Appl. Phys., 1998, 37, (11), pp. 6020-6024
3. MOZUME, T., YOSHIDA, H., NEOGi, A., and KUDO, M.: '1.45μm intersubband absorption in InGaAs/AlAsSb grown by molecular beam epitaxy', Jpn. J. Appl. Phys., 1999, 36, (2B), pp. 1286-1289