Incorporation of group V elements in GaxIn1-xAsyP1-y grown by gas source molecular beam epitaxy

Journal of Electronic Materials

Volumn 25, Issue 9, 1996, Pages 1469-1473

  Lee, Tsuen Lin ^a   Liu, Jin Shung ^a   Lin, Hao Hsiung ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

GaInAsP; Gas source molecular beam epitaxy; Incorporation

Indexed keywords

EID: 0004669190     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02655385     Document Type: Article

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