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Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 215-221

Properties of cubic GaN grown by MBE

(5) Brandt, Oliver a Yang, Hui b Müllhäuser, Jochen R a Trampert, Achim a Ploog, Klaus H a

a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

b INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

Cubic gallium arsenide film; Molecular beam epitaxy; Photoluminescence; Transmission electron microscopy

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRIC PROPERTIES; ELECTRONS; FILM GROWTH; MOLECULAR BEAM EPITAXY; NITRIDES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

CUBIC GALLIUM NITRIDE; LATTICE MISMATCH;

SEMICONDUCTING FILMS;

EID: 0000973819 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(96)01871-5 Document Type: Article

Times cited : (17)

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