Plasma etched initial pits for electrochemically etched macroporous silicon structures

Journal of Micromechanics and Microengineering

Volumn 11, Issue 4, 2001, Pages 371-375

  Grigoras, Kestutis ^a,b   Niskanen, Antti J ^a   Franssila, Sami ^a  

^a AALTO UNIVERSITY   (Finland)

^b CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ELECTROLYTES; OPTICAL FILTERS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; REACTIVE ION ETCHING; SILICON WAFERS;

MACROPOROUS SILICON STRUCTURES;

AMORPHOUS SILICON;

EID: 0035397290     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/11/4/315     Document Type: Article

References (11)

1. Pattern shape effects and artefacts in deep silicon etching
2. Plasma etching: Principles, mechanisms, application to micro- and nano-technologies
3. Formation mechanism and properties of electrochemically etched trenches in n-type silicon
4. Formation of wide and deep pores in silicon by electrochemical etching
5. Fabrication of a beam-mass structure using single-step electrochemical etching for micro structures (SEEMS)
6. The limits of macropore array fabrication
7. Contact hole etch scaling towards 0.1 μm
8. Initial pits formation for electrochemical etching in hydrofluoric acid
9. The physics of macroporous silicon formation
10. Formation of through-holes on silicon wafer by excitation electropolishing method