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Volumn 39, Issue 2 A, 2000, Pages 378-386

Formation of through-holes on silicon wafer by optical excitation electropolishing method

Author keywords

Deep capillary; Optical excitation electropolishing; Pit; Through hole

Indexed keywords

ANODES; ASPECT RATIO; CAPILLARITY; CATHODE FOLLOWERS; ELECTROLYTES; ELECTROLYTIC POLISHING; MICROSTRUCTURE; PLATINUM;

EID: 0033885556     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.378     Document Type: Article
Times cited : (21)

References (15)
  • 14
    • 0005334637 scopus 로고
    • ed. IEE Greshman Press, London
    • INSPEC: Properties of Silicon, ed. IEE (Greshman Press, London, 1988) 164.
    • (1988) Properties of Silicon , pp. 164
  • 15
    • 85088005775 scopus 로고    scopus 로고
    • Nihon Sibber Co., Ltd., Tokyo, [in Japanese]
    • - Ion Selection) (Nihon Sibber Co., Ltd., Tokyo, 1996) p. 6 [in Japanese].
    • (1996) - Ion Selection) , pp. 6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.