Initial pits for electrochemical etching in hydrofluoric acid

Sensors and Actuators, A: Physical

Volumn 85, Issue 1, 2000, Pages 390-394

  Ohji, H ^a   French, P J ^b   Izuo, S ^a   Tsutsumi, K ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL ORIENTATION; ELECTROCHEMISTRY; FABRICATION; HYDROFLUORIC ACID; METALLOGRAPHIC MICROSTRUCTURE; PITTING; POROUS SILICON; SUBSTRATES;

ELECTROCHEMICAL ETCHING; ISOTROPIC WET ETCHING;

ETCHING;

EID: 0034251083     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(00)00430-1     Document Type: Article

References (5)

1. Turner D.R. Electropolishing silicon in HF acid solutions. J. Electrochem. Soc. 105:1958;402-408.
2. Lehmann V., Foll H. Formation mechanism and properties of electrochemically etched trenches in n-type silicon. J. Electrochem. Soc. 137:1990;653-659.
3. Ohji H., Trimp P.J., French P.J. Fabrication of free standing structure using single-step electrochemical etching in hydrofluoric acid. Sensors and Actuators, A. 73:1999;95-100.
4. Ohji H., Lahteenmaki S., French P.J. Macro porous silicon formation for micromachining. Proceedings SPIE, Micromachining and Microfabrication Process Technology III, Austin, TX, USA, September. 1997;189-197.
5. Ohji H., Gennissen P.T.J., French P.J., Tsutsumi K. Fabrication of accelerometer using single-step electrochemical etching for microstructures (SEMMS). IEEE MEMS Conference '99, Orlando, USA:1999;61-65.