Growth mechanism of 3C-SiC(111) films on Si using tetramethylsilane by rapid thermal chemical vapor deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 4, 1997, Pages 2226-2233

  Seo, Y H ^a   Nahm, K S ^a   Suh, E K ^a   Lee, H J ^a   Hwang, Y G ^b  

^a Chonbuk National University   (South Korea)

^b Wonkwang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031479778     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580538     Document Type: Article

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