Optical investigation of thick 3C-SiC layers deposited on bulk silicon by CVD

Diamond and Related Materials

Volumn 6, Issue 10, 1997, Pages 1385-1387

  Bluet, J M ^a   Camassel, J ^a   Falkovsky, L A ^a,b   Leycuras, A ^a  

^a CNRS   (France)

^b LANDAU INSTITUTE FOR THEORETICAL PHYSICS   (Russian Federation)

Author keywords

3C SiC heteroepitaxy; Epitaxial layer uniformity; Roughness; Strain relaxation

Indexed keywords

EID: 0043137729     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(97)00101-5     Document Type: Article

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