Analysis of transverse modes of nitride-based laser diodes

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 765-770

  Onomura, Masaaki ^a,b   Saito, Shinji ^a,c   Sasanuma, Katsunobu ^a,d   Hatakoshi, Gen Ichi ^a,d   Nakasuji, Mikio ^a,e   Rennie, John ^a,d   Sugiura, Lisa ^a,f   Nunoue, Shinya ^a   Nishio, Joji ^a   Itaya, Kazuhiko ^a  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

^e OSAKA UNIVERSITY   (Japan)

^f TOKAI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CLADDING (COATING); CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRIC EXCITATION; LASER MODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SIMULATION; TEMPERATURE; THICKNESS MEASUREMENT;

JUNCTION PLANE; OPTICAL CONFINEMENT FACTOR; PERPENDICULAR FAR FIELD PATTERNS; SEMICONDUCTING ALUMINUM GALLIUM NITRIDE; SEMICONDUCTING GALLIUM NITRIDE; SEMICONDUCTOR EPITAXIAL LAYERS; THRESHOLD CURRENT DENSITY; TRANSVERSE MODES;

SEMICONDUCTOR LASERS;

EID: 0033123891     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788449     Document Type: Article

References (9)

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