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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 7, 2001, Pages 4445-4449

Photoluminescence study on InGaN/GaN quantum well structure grown on (112̄0) sapphire substrate

(3) Bai, Jie a Wang, Tao b Sakai, Shiro a

a UNIVERSITY OF TOKUSHIMA (Japan)

b Nitride Semiconductor Ltd Co (Japan)

Author keywords

Exciton localization effect; InGaN GaN MQW; Photoluminescence; Sapphire; Substrate orientation

Indexed keywords

EXCITONS; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

QUANTUM WELL STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035388259 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.4445 Document Type: Article

Times cited : (5)

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