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Applied Physics A: Materials Science and Processing

Volumn 70, Issue 3, 2000, Pages 329-331

Nonuniform defect distribution in GaN thin films examined by cathodoluminescence

(2) Goldys, E M a Godlewski, M b

a MACQUARIE UNIVERSITY (Australia)

b INSTITUTE OF PHYSICS (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; FILM GROWTH; LIGHT ABSORPTION; POINT DEFECTS; RAMAN SPECTROSCOPY; SAPPHIRE; SILICON CARBIDE; TEMPERATURE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

NONUNIFORM DEFECT DISTRIBUTION; REABSORPTION EFFECTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034156172 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390050055 Document Type: Article

Times cited : (8)

References (10)

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