Extraction of eleven model parameters for consistent reproduction of lateral bipolar snapback high-current I - V characteristics in NMOS devices

IEEE Transactions on Electron Devices

Volumn 48, Issue 6, 2001, Pages 1237-1244

  Chen, M J ^a   Lee, H S ^a   Chen, S T ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Bipolar; Electrostatic discharge (ESD); MOS; Second breakdown; Snapback

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; IMPACT IONIZATION; TRANSISTORS; TRIGGER CIRCUITS;

ELECTROSTATIC DISCHARGE (ESD);

MOS DEVICES;

EID: 0035368033     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.925254     Document Type: Article

References (16)

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