Unified substrate current model for weak and strong impact ionization in sub-0.25 μm NMOS devices

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 885-888

  Ramaswamy, Sridhar ^a   Amerasekera, Ajith ^a   Chang, Mi Chang, ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATIC DISCHARGES (ESD); UNIFIED SUBSTRATE CURRENT MODELS;

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC DISCHARGES; ELECTRIC NETWORK SYNTHESIS; ELECTROSTATICS; HOT CARRIERS; IONIZATION OF SOLIDS; OPTIMIZATION; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES;

MOSFET DEVICES;

EID: 4243547221     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)