Circuit-level simulation of CDM-ESD and EOS in submicron MOS devices

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn , Issue , 1996, Pages 316-321

  Ramaswamy, Sridhar ^a   Li, Erhong ^a   Rosenbaum, Elyse ^a   Kang, Sung Mo ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC DISCHARGES; ELECTROSTATICS; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS;

CHARGED DEVICE MODEL (CDM); CIRCUIT LEVEL SIMULATION; ELECTRIC OVERSTRESS (EOS); ELECTROSTATIC DISCHARGE (ESD);

MOS DEVICES;

EID: 0030399673     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)