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Volumn , Issue , 1999, Pages 167-178
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Modular approach of a high current MOS compact model for circuit-level ESD simulation including transient gate coupling behavior
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
APPROXIMATION THEORY;
CMOS INTEGRATED CIRCUITS;
COMPUTER SIMULATION;
CONVERGENCE OF NUMERICAL METHODS;
ELECTRIC DISCHARGES;
GATES (TRANSISTOR);
MATHEMATICAL MODELS;
AVALANCHE MULTIPLICATION FACTOR;
ELECTRO STATIC DISCHARGE;
GATE COUPLING EFFECT;
MOSFET DEVICES;
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EID: 0032678897
PISSN: 00999512
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Article |
Times cited : (40)
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References (30)
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