Vertical P-MOSFETs with heterojunction between source/drain and channel

Annual Device Research Conference Digest

Volumn , Issue , 2000, Pages 25-26

  Chen, Xiangdong ^a   Ouyang, Qiqing ^a   Liu, Kou Chen ^a   Shi, Zhonghai ^a   Tasch, Al ^a   Banerjee, Sanjay ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES CONTROL; ELECTRIC VARIABLES MEASUREMENT; ENERGY GAP; FERMI LEVEL; HETEROJUNCTIONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

CHANNEL LENGTH; FLOATING BODY EFFECT; SHORT CHANNEL EFFECT; SUBTHRESHOLD CHARACTERISTICS;

MOSFET DEVICES;

EID: 0033645247     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (3)