Bandgap engineering in deep submicron vertical pMOSFETs

Annual Device Research Conference Digest

Volumn , Issue , 2000, Pages 27-28

  Ouyang, Q ^a   Chen, X D ^a   Mudanai, S ^a   Kencke, D L ^a   Tasch, A F ^a   Banerjee, S K ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON TUNNELING; ENERGY GAP; HETEROJUNCTIONS; KINETIC ENERGY; LEAKAGE CURRENTS; MATHEMATICAL MODELS; QUANTUM ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

BANDGAP ENGINEERING; CHANNEL DOPING; DRAIN CURRENT; DRIVE CURRENT; QUANTUM MECHANICAL TUNNELING; SOURCE HETEROJUNCTION;

MOSFET DEVICES;

EID: 0033645880     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)