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Volumn 478, Issue 1-2, 2001, Pages 1-8

Initial stages of Sb2 deposition on InAs(0 0 1)

(6) Nosho, B Z a Shanabrook, B V b Bennett, B R b Barvosa Carter, W b Weinberg, W H a Whitman, L J b

a University of California (United States)

b NAVAL RESEARCH LABORATORY (United States)

Author keywords

Antimony; Indium antimonide; Indium arsenide; Molecular beam epitaxy; Scanning tunneling microscopy; Surface structure, morphology, roughness, and topography

Indexed keywords

ANNEALING; ANTIMONY COMPOUNDS; CHEMICAL BONDS; MOLECULAR BEAM EPITAXY; MONOLAYERS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE ROUGHNESS; SURFACE STRUCTURE; SYNTHESIS (CHEMICAL);

INDIUM ANTIMONIDE;

SURFACE TREATMENT;

EID: 0035341876 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)00949-9 Document Type: Article

Times cited : (6)

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