AlSb/InAs HEMTs using modulation InAs(Si)-doping

Electronics Letters

Volumn 34, Issue 4, 1998, Pages 403-404

  Boos, J B ^a   Bennett, B R ^a   Kruppa, W ^a   Park, D ^a   Yang, M J ^a   Shanabrook, B V ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT DENSITY; GATES (TRANSISTOR); LEAKAGE CURRENTS; MAGNETIC FIELD MEASUREMENT; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM HALL MEASUREMENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032545887     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980219     Document Type: Article

References (7)

1. BOLOGNESI, C.R., CAINE, E.J., and KROEMER, H.: 'Improved charge control and frequency performance in AlSb/InAs-based heterostructure field-effect transistors'. IEEE Electron. Device Lett., 1994, 15, (1), pp. 16-18
2. BOOS, J.B., KRUPPA, W., PARK, D., BENNETT, B.R., and BASS, R.: 'DC, small-signal, and noise characteristics of 0.1μm AlSb/InAs HEMTs'. Proc. Ninth Int. Conf. IPRM, 1997, pp. 193-196
3. WERKING, J.D., BOLOGNESI, C.R., CHANG, L.-D., NGUYEN, C., HU, E.L., and KROEMER, H.: 'High-transconductance InAs/AlSb heterojunction field-effect transistors with α-doped AlSb upper barriers'. IEEE Electron. Device Lett., 1992, 13, (3), pp. 164-166
4. MALIK, T.A., CHUNG, S.J., STRADLING, R.A., YUEN, W.T., HARRIS, J.J., and NORMAN. A.G.: 'Remote doping of InAs/GaSb quantum wells by means of a second InAs well doped with silicon'. Inst. Phys. Conf. Ser., 1995, pp. 229-233 (no. 144)
5. SASA, S., YAMAMOTO, Y., IZUMIYA, S., YANO, M., IWAI, Y., and INOUE, M.: 'Increased electron concentration in InAs/AlGaSb heterostructures using a Si planar doped ultrathin InAs quantum well', Jpn. J. Appl. Phys., 1997, 36, pp. 1869-1871
6. BENNETT, B.R., YANG, M.J., SHANABROOK, B.V., BOOS, J.B., and PARK. D.: 'Modulation InAs(Si) doping of InAs/AlSb quantum wells', submitted to Appl. Phys. Lett.
7. BOOS, J.B., KRUPPA, W., PARK, D., MOLNAR, B., BASS, R., GOLDENBERG, M., BENNETT, B.R., and MITTEREDER, J.: 'Pd/Pt/Au and AuGe/Ni/Pt/Au ohmic contacts for AlSb/InAs HEMTs'. Proc. Eighth Int. Conf. IPRM, 1996, pp. 354-357