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Volumn 16, Issue 4, 1998, Pages 2381-2386

Structure of InAs/AlSb/InAs resonant tunneling diode interfaces

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Indexed keywords


EID: 0000568723     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590178     Document Type: Article
Times cited : (18)

References (37)
  • 18
    • 0001260849 scopus 로고
    • This temperature was estimated by infrared transmission measurements on an InAs film grown on a GaAs substrate. [See, for instance, B. V. Shanabrook, J. R. Waterman, J. L. Davis, and R. J. Wagner, Appl. Phys. Lett. 61, 2338 (1992).] These measurements can be sensitive to the growth conditions, surface morphology, etc., and results may vary at different laboratories. For example, a similar experiment in a different lab determined the transition temperature to be ∼40°C higher than we observed.
    • (1992) Appl. Phys. Lett. , vol.61 , pp. 2338
    • Shanabrook, B.V.1    Waterman, J.R.2    Davis, J.L.3    Wagner, R.J.4
  • 24
    • 11644328133 scopus 로고    scopus 로고
    • to be published
    • J. J. Zinck (to be published).
    • Zinck, J.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.