Growth and characterisation of InAs/InGaSb/InAs/AISb infrared laser structures

Electronics Letters

Volumn 34, Issue 3, 1998, Pages 270-272

  Yang, M J ^a   Moore, W J ^a   Bennett, B R ^a   Shanabrook, B V ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

MID WAVELENGTH INFRARED LASERS;

SEMICONDUCTOR LASERS;

EID: 0032484779     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981221     Document Type: Article

References (10)

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