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Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 888-893

Stranski-Krastanov growth of InSb, GaSb, and AlSb on GaAs: Structure of the wetting layers

(5) Bennett, B R a Shanabrook, B V a Thibado, P M a,b Whitman, L J a Magno, R a

a NAVAL RESEARCH LABORATORY (United States)

b UNIVERSITY OF ARKANSAS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL ORIENTATION; FILM GROWTH; MOLECULAR BEAM EPITAXY; MONOLAYERS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SURFACE STRUCTURE; WETTING;

STRANSKI-KRASTANOV GROWTH; SURFACE RECONSTRUCTION;

SEMICONDUCTING FILMS;

EID: 0031147003 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00917-7 Document Type: Article

Times cited : (37)

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