Low temperature direct crystallization of SrBi2(Ta1-xNbx)2O9 thin films by thermal metalorganic chemical vapor deposition and their properties

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 5 A, 2001, Pages 3337-3342

  Mitsuya, Masatoshi ^a   Nukaga, Norimasa ^a   Saito, Keisuke ^b   Osada, Minoru ^c   Funakubo, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b PHILIPS RESEARCH LABORATORIES   (Germany)

^c INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

Direct preparation; Fatigue free; Low deposition temperature; Metalorganic chemical vapor deposition; Strontium bismuth tantalum niobium oxide

Indexed keywords

COERCIVE FORCE; CRYSTAL ORIENTATION; CRYSTALLIZATION; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLARIZATION; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; RANDOM ACCESS STORAGE; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

LOW DEPOSITION TEMPERATURE; X RAY RECIPROCAL SPACE MAPPING METHODS;

THIN FILMS;

EID: 0035328562     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.3337     Document Type: Article

References (22)