SCOPUS 정보 검색 플랫폼

Volumn 224, Issue 3-4, 2001, Pages 251-255

Effects of post-annealing on the interface microstructure of (Ba,Sr)TiO3 thin films

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

Author keywords

A1. Transmission electron microscopy; A3. Metalorganic chemical vapor deposition; B1. Barium compounds; B2. Dielectric materials

Indexed keywords

ANNEALING; BARIUM TITANATE; CERAMIC MATERIALS; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; CRYSTALLIZATION; ELECTRON DIFFRACTION; FILM PREPARATION; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLATINUM; SILICA; TEXTURES; TRANSMISSION ELECTRON MICROSCOPY;

BARIUM STRONTIUM TITANATE; SELECTED AREA ELECTRON DIFFRACTION;

DIELECTRIC FILMS;

EID: 0035309447 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00699-6 Document Type: Article

Times cited : (18)

References (16)

1
- 0032045710
- (1998) J. Appl. Phys. , vol.83 , pp. 3703
- Hwang, C.S.¹ Lee, B.T.² Kang, C.S.³ Kim, J.W.⁴ Lee, K.H.⁵ Cho, H.J.⁶ Horii, H.⁷ Kim, W.D.⁸ Lee, S.I.⁹ Roh, Y.B.¹⁰ Lee, M.Y.¹¹

2
- 0000084660
- (1997) J. Appl. Phys. , vol.82 , Issue.5 , pp. 2558
- Baumert, B.A.¹ Chang, L.H.² Matsuda, A.T.³ Tsai, T.L.⁴ Tracy, C.J.⁵ Gregory, R.B.⁶ Fejes, P.L.⁷ Cave, N.G.⁸ Chen, W.⁹

3
- 0001625485
- (1997) J. Appl. Phys. , vol.82 , Issue.5 , pp. 2359
- Dietz, G.W.¹ Schumacher, M.² Waser, R.³ Streiffer, S.K.⁴ Basceri, C.⁵ Kingon, A.I.⁶

4
- 0001506554
- (1998) Appl. Phys. Lett. , vol.72 , Issue.22 , pp. 2823
- Noh, D.Y.¹ Lee, H.H.² Kang, T.S.³ Je, J.H.⁴

5
- 0030284527
- (1996) Jpn. J. Appl. Phys. , vol.35 , pp. 5757
- Paek, S.H.¹ Won, J.H.² Lee, K.S.³ Choi, J.S.⁴ Park, C.S.⁵

6
- 0032046809
- (1998) IEICE Trans. Electron. , vol.E81-C , pp. 497
- Horikawa, T.¹ Tanimura, J.² Kawahara, T.³ Yamamuka, M.⁴ Tarutani, M.⁵ Ono, K.⁶

7
- 0004999859
- (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 4832
- Joo, J.H.¹ Jeon, Y.C.² Seon, J.M.³ Oh, K.Y.⁴ Roh, J.S.⁵ Kim, J.J.⁶

8
- 0030235605
- (1996) Jpn. J. Appl. Phys. , vol.35 , pp. 5002
- Masuda, Y.¹ Baba, A.²

9
- 0032154292
- (1998) Jpn. J. Appl. Phys. , vol.37 , pp. 5112
- Chen, P.C.¹ Miki, H.² Shimamoto, Y.³ Matsui, Y.⁴ Hiratani, M.⁵ Fujisaki, Y.⁶

10
- 0031170060
- (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 3644
- Lee, J.¹ Choi, Y.C.² Lee, B.S.³

11
- 0032048295
- (1998) Jpn. J. Appl. Phys. , vol.37
- Fukuda, Y.¹ Numata, K.² Aoki, K.³ Nishimura, A.⁴ Fujihashi, G.⁵ Okamura, S.⁶ Ando, S.⁷ Tsukamoto, T.⁸

12
- 0000166811
- (1997) Appl. Phys. Lett. , vol.70 , pp. 3053
- Joo, J.H.¹ Seon, J.M.² Jeon, Y.C.³ Oh, K.Y.⁴ Roh, J.S.⁵ Kim, J.J.⁶

13
- 36449009699
- (1995) Appl. Phys. Lett. , vol.67 , pp. 2819
- Hwang, C.S.¹ Park, S.O.² Cho, H.J.³ Kang, C.S.⁴ Kang, H.K.⁵ Lee, S.I.⁶ Lee, M.Y.⁷

14
- 0030120695
- (1996) Jpn. J. Appl. Phys. , vol.35 , pp. 2530
- Yamamuka, M.¹ Kawahara, T.² Yuuki, A.³ Ono, K.⁴

15
- 0031997519
- (1998) J. Mater. Res. , vol.13 , Issue.2 , pp. 368
- Hwang, C.S.¹ Vaudin, M.D.² Schenck, P.K.³

16
- 0031221044
- (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 5840
- Kim, I.T.¹ Chung, S.J.² Park, S.J.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.