Temperature dependent studies of InP/InGaAs avalanche photodiodes based on time domain modeling

IEEE Transactions on Electron Devices

Volumn 48, Issue 4, 2001, Pages 661-670

  Xiao, Y G ^a,b,c   Deen, M J ^a,b,c  

^a IEEE   (Canada)

^b MCMASTER UNIVERSITY   (Canada)

^c SIMON FRASER UNIVERSITY   (Canada)

Author keywords

Avalanche breakdown; Avalanche multiplication; Avalanche photodiode; Frequency response and 3 dB bandwidth; Optical fiber telecommunication; Optoelectronic devices; Photodetectors; Semiconductor device modeling

Indexed keywords

AVALANCHE PHOTODIODES; NOISE FACTOR;

AVALANCHE DIODES; BANDWIDTH; ELECTRIC BREAKDOWN; FAST FOURIER TRANSFORMS; HOLE TRAPS; IMPULSE RESPONSE; OPTICAL COMMUNICATION; OPTOELECTRONIC DEVICES; PHONONS; SCATTERING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; TIME DOMAIN ANALYSIS;

PHOTODIODES;

EID: 0035308917     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.915678     Document Type: Article

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