Characterization and modeling of SAGCM InPDnGaAs avalanche photodiodes for multigigabit optical fiber communications

Advances in Imaging and Electron Physics

Volumn 99, Issue C, 1997, Pages 65-170

  Ma, C L F ^a   Deen, M J ^b   Tarof, L E ^c  

^a LUCENT TECHNOLOGIES   (United States)

^b SIMON FRASER UNIVERSITY   (Canada)

^c NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77954577915     PISSN: 10765670     EISSN: None     Source Type: Book Series    
DOI: 10.1016/s1076-5670(08)70241-6     Document Type: Article

References (121)

1. Akaliori, Y., Akastu. Y., Kohzen. A,. and Yoshida, J. (1992). "10-Gb/s high-speed monolithically integrated photoreceiver using InGaAs p-i-n PD and planar doped InAIAs/lnGaAs\ HEMTs."IEEE. Photon.Technol. Lett. PTL-4, pp. 754-756.
2. An. S.. Deen M. J.. and Tarof. L. (9-II September 1996). "Temperature Dependence of the Break down and Punchthrough Voltages, and lonization Coefficients in SAGCM InP/lnGaAs Phototliodes". Proceedings of the 26th European Solid-State Device Research Conference, Bologna, Italy (ESSDERC '96). Eds.. G. Baccarani and M. Rudan. Editions Frontiers. France. pp. 782-784.
3. Anderson. C. L., and Crowell. C. R. (1972). "Threshold energies for electron-hole pair produclion by impact ionization in semiconductors." Phys. Rev. B5. pp 2267-2272.
4. Armiento, C. A,. and Groves. S. H. (1983). "Impact ionization in (100)-. (I10). and (I I I )-oriented InP avalanche photodiodes." Appl. Phys Lett. 43, pp. 198-200.
5. Bandyopadhyay, A,. An. S.. Deen. M. J.. and Tarof. L. E. (1997). "Modelling of Breakdown Voltage of InP/lnGaAs Avalanche Photodiodea at Iow Temperatures". Proceedings of the Fourth Symposium Low Temperature Electronics and High Temperature Superconductivity, Proceedings Volume97-2. Eds. Eds. C. Claeys, S.I. Raider, M.J. Deen, W.D. Brown & R. K. Kirschman. The Electrochemical Society Press, Penington, New Jersey, 9 pages.
6. Baraff, G. A. (1962). "Distribution functions and ionization rates for hot electrons in semiconductors."Phys. Rev. 128, pp. 2507-2517.
7. Beneking. H. (1982). "Gain and bandwidth of fast near-infrared photodetectors: A comparison ofdiodes. phototransistors, and photoconductive devices," IEEE Trans. Electron. Dev: ED-29,pp. 1420-1431.
8. Campbell, J. C. (1989). "Photodetectors for long-wavelength lightwave systems," in C. Lin(ed).Optoel-ectronic technology and lightwave (comunnications, Van Nohtrand Reinhold.
9. Campbell. J. C., Dentai, A. G.. Holden. W. S.. and Kasper, B. L. (1983). "High-performance avalanche photodiode with separate absorption, grading, and multiplication regions." Electron. Lett. 19,pp. 818-820.
10. Campbell. J. C.. Holden. W. S., Qua. G. J., and Dental, A. G. (1985). "Frequency response of InP/lnGaAsp/lnGaAs avalanche photodiodes with separate absorbption 'grading' and multiplication regions." IEEE J. Quan. EIectron. QE-21, pp. 1743-1746.
11. Campbell. J. C., Johnson. B. C., Qua. G. J., and Tsang, W. T. (1989). "Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes." .J. Lightwave Tech. 7. pp. 778-784.
12. Campbell, J. C., Tsnng. W. T.. Qua. G. J.. and Johnson, B. C. (1988). "High-speed InP/lnGaAs avalanche photodiodes grown by chemical beam expitaxy." IEEE J. Quan. Electron. QE-25.pp. 496-500.
13. Capasso. F. (1985). "Physics of avalanche photodiodes," in W. T. Tsang (ed.). Semicondoctors and semimentals 22D, Academic Press.
14. Capasso. F., Cho. A. Y., and Foy, P. F. (1984). "Low-dark-current low-voltage 1.3-1.6 μm avalanche photodiode with high-low electric profile mil separate absorption and multiplication regions by molecular beam epitaxy," Electron. Lett. 20, pp. 635-637. (Pubitemid 14627190)
15. Capasso, F, Cox. H. M.. Hutchinson. A. L.., Olsson, N. A., and Hummel. S. G. (1984). "Pseudo-quaternary GalnAsP semiconductor: A new GaInA/lnP graded gap superlattice and its abdications to avalanche photodiode," Appl. Phys.lett. 45, pp. I192-1195.
16. Capasso. F.. Tsang, W. T.. Hutchinson, A. L., and Williams. G. F. (1982). "Enhancement of cl electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio."Appl. Phys. Lett. 40, pp. (38-40).
17. Capasso, R, Tsang, W. T., anil Willianis, G. F. (1983). "Staircase solid-statc photomultipliers andiivalanchc photodiodes with enhanced ioniration rates ratio." IEEE Trciiis, Elrcrrori. Devi(.c,s ED-30.pp. 381-390.
18. Casey. H. C., Jr. and Panish, M. B. (1978). 'Hctcrostructure lasers part B: Matcrials and opcrating characteristics.' Academic Press
19. Chau, H. F., and Pavlidis, D.). (1992). "A physics-based fitting and extrapolation method for measured impact ionization coefficients in 111-V semiconductors,"J Appl. Phys, 72, pp, 531-538.
20. Chin. R.. Holonyak. N, Stillman. G. E.. Tang. J. Y.. and Hess, K. (1980). "Impact ionization in mul-tilayer heterojunction structures" Electron. Lett. 16. pp 467-468.
21. Chynoweth. A. G. (I968). "Charge multiplication phenomena." in R. K. Willardson and A. C. Beer(eds.). Semiconductors and semimetals 4, Academic Press.
22. C'onracdi. j. (1974). "Temperature effects in Silicon avalanche diodes." Solid-State Electronics 17. pp,'99-106. 1974.
23. Cook, L. W., Bulman. G. E., and Stillman, G. E. (1982). "Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements," Appl. Phys. Lett. 40, pp. 589-591.
24. Crowell C. R., and Sze, S. M. (1966). "Temperature dependence of avalanche multiplication in semiconductors," Appl. Phys. Lett. 9, pp. 242-244.
25. Deen, M. J., Ilowski, J. I., and Yang, P. (29 May - 3 June 1995). "The Effect of Emitter Geometry and Device Processing on the Low Frequency Noise of Polysilicon Emitter NPN Bipolar Transistors," Proceedings of the 13th International Conference on Noise in Physical Systems and 1/f Fluctuations, Eds. V. Bareikis and R. Katilius, World Scientific Publishing, Singapore, pp. 454-457.
26. Deen. M. J. (13-16 September 1993). "Low Frequency Noise and Excess Currents Due to Trap-Assisted Tunneling in Double Barrier Resonant Tunneling Diodes," Proceedings of the 23rd European Solid-State Device Research Conference (ESSDERC '93), Grenoble, France, pp. 355-358.
27. Deen, M. J., and Ilowski, J. J. (1993). "Noise Characterization and Modelling of Poly-Emitter Bipolar Junction Transistors at Microwave Frequencies," AIP Conference Proceedings 285- Noise in Physical Systems and 1/f Fluctuations (1CNF '93), Eds. P. H. Handel and A. L. Chung, AIP Press, New York, pp. 216-219.
28. Deen. M. J. (1993). Materials Science and Engineering B B20, pp. 207-213.
29. Deen, M. J.. Ilowski J. I., and Yang, P. (1995). Journal of Applied Physics 77(12), pp. 6278-6288.
30. Desurvire. E., Simpson, J. R., and Becker, P. C. (1987). "High-gain erbium-doped travelling-wave fibre amplifier," Opt. Lett. 12. pp. 888-890.
31. Diudiak, V., Groves, S. H., Hurwitz, C. E., and Iseler, G. W. (1981). "Low dark-current, high gain GalnAsP/InP avalanche photodetectors," IEEE J. Quan. Electron. QE-17, pp. 260-263.
32. Emmons, R. B. (1967). "Avalanche photodiode frequency response."J Appl. Phys. 33. pp. 3705-3714.
33. Forrest. S. R. (1981). "Performance of InsGa]xAsyPi y photodiodes with dark current limited by diffusion, generation-recombination, and tunneling," IEEE J. Quan. Electron. QE-17. pp. 217-226.
34. Forrest, S. R. (1986). "Optical detectors: three contenders," IEEE Spectrum, May issue, pp. 76-84.
35. Forrest, S. R. (1988). "Optical detectors for lightwave communication," in S. E. Miller and I. P. Kaminow (eds.), Optical fibre telecommunications, 2nd ed.. Academic Press.
36. Forrest, S. R., Kim. O. K" and Smith. R. G. (1982). "Optical response time of InGaAs/InP avalanche photodiodes," Appl. Phys. Lett. 41, pp. 95-98.
37. Forrest, S. R. Kim, O. K., and Smith, R. G. (1983). "Analysis of the dark current and photoresponse of InGaAs/InP avalanche photodiodes," Solid-Slate Electronics 26, pp. 951-968.
38. Gallant M., and Zemel, A. (1988). "Long minority hole diffusion length and evidence for bulk radiative recombination limited lifetime in InP/InGaAs/InP double heterostructures," Appl. Phys. Lett. 52, pp. 1686-1688.
39. Gowar, J. (1993). Optical communication systems, 2nd cd., Prentice Hall.
40. Grove. A. S. (1967). Physics and technology oj semiconductor devices, Wiley.
41. Hollenhorst, J. N. (1990). "Frequency response theory for multilayer photodiodes,"J LightwaveTech-nol. 8. pp. 531-537.
42. Hollenhorst, J. N. (1990). "High frequency performance of planar InGaAs/InP APDs." in SPIE Conf. Proc. 995. High frequency analog communications, pp. 53-60.
43. Ito. M.. Mikawa, T., and Wada. O. (1990). "Optimum design of 5-doped InGaAs avalanche photodiode by using quasi-ionization rates," J Lightwave Technol. 8, pp. 1046-1050.
44. Kagawa. T., Asai, H., and Kawamura, Y. (1991). "An InGaAs/InAlAs superlattice avalanche photodiode with a gain bandwidth product of 90 GHz," IEEE Photon. Technol. Lett. PTL-3. pp. 815-817.
45. Kagawa, T., Iwamura, H. and Mikami, O. (1989). "Dependence of the GaAs/AlGaAs superlattice ionization rate on Al content," Appl. Phys. Lett. 54, pp. 33-35.
46. Kagawa, T" Kawamura. Y, Asai, H.. and Naganuma, M. (1990). "InGaAs/InAlAs superlattice avalanche photodiode with a separated photoabsorplion layer," Appl. Phys. Lett. 57, pp. 1895-1897.
47. Kagawa, T, Kawamura, Y. Asai, H.. Naganuma, M.. and Mikami, O. (1989)."Impact ionization rates in an InGaAs/InAlAs superlattice," Appl. Phys. Lett. 55, pp. 993-995.
48. Kagawa, T. Kawamura, Y., and Iwamura, H. (1992). "InGaAsP/InAIAs superlattice avalanche pho-todiodc," IEEE J. Quun. Electron. QE-28. pp. 1419-1423.
49. Kagawa, T., Kawamura, Y. and Iwamura, H. (1993). "A wide-bandwidth low-noise InGaAsP/ In-AlAs superlattice avalanche photodiode with a flip-chip structure for wavelength of 1.3 and 1.5 (μm," IEEE J. Quun. Electron. QE-29, pp. 1387-1392.
50. Kanbe, H.. Grosskopf, G., Mikami, O., and Machida, S. (1981). "Dark current noise characteristics and their temperature dependence in Germanium avalanche photodiodes," IEEE J. Quart. Electron. QE-17, pp. 1534-1539.
51. Kahraman, G., Saleh. B. E. A., Sargeant, W. L., and Teich.M. C. (1992). "Time and frequency response of avalanche photodiodes with arbitrary structure." IEEE Trans. Electron. Devices ED-39, pp. 553-560.
52. Kaneda, T. (1985). "Silicon and germanium avalanche photodiodes," in W. T. Tsang (ed.). Semiconductors and semimetals 22D, Academic Press.
53. Kao, C. W., and Crowell, C. R. (1980). "Impact ionization by electrons and holes in InP," Solid-State Electronics 23. pp. 881-891.
54. Kao, K. C, and Hockham, G. A. (1966). "Dielectric fibre surface waveguides for optical frequencies," Proc. 1EE 113, pp. 1151-1158.
55. Kim, O. K., Forrest, S. R., Bonner, W. A., and Smith, R. G. (1981). "A high gain InGaAs/InP avalanche photodiodes with no tunneling leakage current," Appl. Phys. Lett. 39, pp. 402-404.
56. Kobayashi. M.. Yamazaki, S.. and Kaneda, T. (1984). "Planar InP/lnGaAsP/InGaAs buried structure APD," Appl. Phys. Lett. 45, pp. 759-761.
57. Kuchibhotla, R., and Campbell, J. C. (1991). "Delta-doped avalanche photodiodes for high bit-rate lightwave receivers," J. Lightwave Technol. 9, pp. 900-905.
58. Kuchibhotla. R., Campbell, J. C, Tsai, C, Tsang. W. T.. and Choa, F S. (1991). "InP/lnGaAsP/InGaAs SAGM avalanche photodiode with delta-doped multiplication region," Electron. Lett. 27, pp. 1361-1363.
59. Kuvas, R., and Lee, C. A. (1970). "Quasistatic approximation for semiconductor avalanches." J. Appl. Phys. 41, pp. 1743-1755.
60. Li, X. M, Deen, M. J, Stapleton, S" Hardy, R. H. S" and Berolo, O. (December 1990). Cryogenics 30(12), pp. 1140-1145.
61. Liu. Y, Forest, S.. Hladky.J. Lange, M.J., Olsen, G. H.. and Ackley, D. E. (1992). "A Planar InP/ InGaAs avalanche photodiode with floating guard ring and double diffused junction," J. Lightwave Technol. 10, pp. 182-192.
62. Ma, C. L. F. Deen, M. J., and Tarof, L. (14-17 September 1993). "D.C. and Noise Characteristics of InP-Based Avalanche Photodiodes for Optical Communication Applications". Proceedings of the Canadian Conference on Electrical & Computer Engineering, Vancouver, pp. 1270-1273.
63. Ma, C. L. F Deen, M. J., and Tarof. L. (11 -15 September 1994). "Dark Current Noise Characteristics of Separate Absorption, Grading, Charge, and Multiplication in InP/InGaAs Avalanche Photodiodes," Proceedings of the 24th European Solid-Stale Device Research Conference (ESSDERC '94), Edinburgh, Scotland, pp. 727-730.
64. Ma. C. L. F, Deen, M. J., and Tarof, L. (11 -15 September 1994). "Fast and Accurate Method of Extracting Two Critical Device Parameters of SAGCM InP/InGaAs Avalanche Photodiodes", 24th European Solid-State Device Research Conference (ESSDERC '94), Edinburgh, Scotland, pp. 459-462.
65. Ma. C. L. F, Deen, M. J., and Tarof, L. (November 1995). "Multiplication in Separate Absorption, Grading, Charge and Multiplication InP/InGaAs Avalanche Photodiodes," IEEE Journal of Quantum Electronics 31(11), pp. 2078-2089.
66. Ma. C. L. F, Deen. M. J., and Tarof. I. (25-27 September 1995). "Multiplication in InP/InGaAs Avalanche Photodiodes," Proceedings of the 25th European Solid-Stale Device Research Conference (ESSDERC '95), The Hague, Nederland, pp. 765-768.
67. Ma, C. L. F, Deen M. J., and Tarof, L. (December 1995). "Device Parameters Extraction in Separate Absorption, Grading, Charge and Multiplication InP/InGaAs Avalanche Photodiodes," IEEE Transactions on Electron Devices 42(12), pp. 2070-2079.
68. Ma, C. L. F, Deen, M. J., Tarof L., and Yu, J. (December 1994). "Modelling of Breakdown Voltage and its Temperature Dependence in SAGCM InP/InGaAs Avalanche Photodiodes," 1994 International Electron Device Meeting (IEDM), San Francisco, California, pp. 583-586.
69. Ma, C. L. F., Deen, M. J., Tarof, L., and Yu, J. (May 1995). "Temperature Dependence of Breakdown Voltages in Separate Absorption, Grading, Charge and Multiplication InP/InGaAs Avalanche Photodiodes," IEEE Transactions on Electron Devices 42(5), pp. 810-818.
70. Mclntyrc, R. J. (1966). "Multiplication noise in uniform avalanche diodes," IEEE Trans. Electron. Devices ED-1, pp. 164-168.
71. Mclntyre, R. J. (1972). "The distribution of gains in uniformly multiplying avalanche photodiodes: Theory," IEEE Trans. Electron. Devices ED-19, pp. 703-713.
72. Mears, R. J., Reekie, L. Jauncey, I. M., and Payne, D. N. (1987). "Low-noise erbium-doped fibre amplifier at 1.54 pm" Electron. Lett. 23, pp. 1026-1028.
73. Miller, S. L. (1955). "Avalanche breakdown in Germanium," Phys. Rev. 99, pp. 1234-1241.
74. Miller, S. L. (1957). "Ionization rates for holes and electrons in Silicon." Phys. Rev. 105. pp. 1246-1249.
75. Miyamo, Y., Hagimoto, K., Ohhata, M., Kagawa, T. Tsuzuki, N. Tsunetsuga, H., and Nishi. I. (1994). "10-Gb/s strained MQW DFB-LD transmitter module and superlattice APD receiver module using GaAs MESFET IC's," .J. Lightwave Tech. 12, pp. 332-342.
76. Mohammed, K., Capasso, F, Allam, J. Cho, A. Y., and Hutchinson, A. L. (1985). "New high-speed long-wavelength Alo.48lno.52As/Gao.47Ino.53As multiquantum well avalanche photodiodes," Appl. Phys. Lett. 47, pp. 597-599.
77. Moll, J. L. (1964). Physics of semiconductors. McGraw-Hill.
78. Ng, A., Deen, M. J., and Ilowski. J. (Oct-Nov 1992). "Determination of the Trap Energy Levels and Emitter Area Dependence of Noise in Poly-Emitter Bipolar Junction Transistors from Generation-Recombination Noise Spectra," Canadian Journal of Physics 70(10-11), pp. 949-958.
79. Nishida, K., Taguchi, K., and Matsumoto, Y. (1979). "InGaAsP heterojunction avalanche photodiodes with high avalanche gain," Appl. Phys. Lett. 35, pp. 251-252.
80. Okuto, Y" and Crowell, C. R. (1972). "Energy-conservation considerations in the characterization of impact ionization in semiconductors," Phys. Rev. 6, pp. 3076-3081.
81. Osaka, F. and Mikawa, T. (1986). "Excess noise design of InP/InGaAsP/lnGaAs avalanche photodiodes," IEEE J. Quart. Electron. QE-22, pp. 471-1178
82. Osaka, F, Mikawa, T, and Kaneda, T. (1985). "Impact ionization coefficients of electrons and holes in (lOO)-oriented Ga1-xInxAsyP1 y." IEEE J. Quart. Electron. QE-21, pp. 1326-1338.
83. Osaka, F, Mikawa, T" and Wade, O. (1986). "Electron and hole impact ionization rates in InP/GalnAs superlattice," IEEE J. Quan. Electron. QE-22, pp. 1986-1991.
84. Palais, J. C. (1992). Fibre optic communications. 3rd ed.. Prentice Hall.
85. Pearsall, T. P. (1979). "Threshold energies for impact ionization by electrons and holes in InP." Appl. Phys. Lett. 35. pp. 168-170.
86. Pearsall, T. P. (1980). "Impact ionization rates for electrons and holes in GalnAs," Appl. Phys. Lett. 36, pp. 218-220.
87. Rolland, C, Tarof, L. E.. and Somani, A. (1992). "Multigigabit networks: the challenge," IEEE LTS. May issue, pp. 16-26.
88. Roy B. C. and Chakrabarti, N. B. (1992). "Pulse response of avalanche photodiodes," J. Lightwave Technol.H). pp. 169-181.
89. Salch. B. E. A., and Teich. M. C. (1991). Fundamentals of photonics, John Wiley.
90. Senior, J. M. (1992). Optical fiber communications, 2nd ed., Prentice Hall.
91. Shiba, T, Ishimura, E., Takahashi, K.. Namizaki, H., and Susaki, W. (1988). "New approach to the frequency response analysis of an InGaAs avalanche photodiode." .J. Lightwave Technol. 6, pp. 1502-1505.
92. Shirai. T, Mikawa, T. Kaneda, T., and Miyauchi, A. (1983). "InGaAs avalanche photodiodes for l μm wavelength region," Electron. Lett. 19. pp. 535-536.
93. Smith. R. G., and Forrest. S. R. (1982). "Sensitivity of avalanche photodeteclor receivers for long-wavelength optical communications," Hell System Technical J. 61. pp. 2929-2946.
94. Stillman. G. E., and Wolfe, C. M. (1977). "Avalanche photodiodes." in R. K. Willardson and A. C. Beer (eds.), Semiconductors and seniimetals 12, Academic Press,
95. Susa, N" Mamauchi, Y" and Kanbe, H. (1980). "Punch-through type InGaAs photodetector fabri-cated by vapor-phase epitaxy," IEEE J. Qnan. Electron. QE-16. pp. 542-545.
96. Susa. N., Nakagonie, H., Ando, H.. and Kanbe. H. (1981). "Characteristics in InGaAs/InP avalanche photodiodes with separate absorption and multiplication regions," IEEE J. Quan. Electron. QE-17, pp. 243-250. (Pubitemid 11479763)
97. Susa, N" Nakagonie, H" Mikanii. O., Ando, H., and Kanbe, H. (1981). "Characteristics in InGaAs/ InP avalanche photodiodes with separate absorption and multiplication regions," IEEE J. Quan. Electron. QE-17. pp. 243-250.
98. Taguchi, K.. Torikai, T, Sugimoto, Y, Makita. K.. and Ishihara, H. (1986). "Temperature dependence of impact ionization coefficients in InP," J. Appl. Phys. 59, pp. 476-481.
99. Taguchi. K. Torikai. T. Sugimoto. Y. Makita, K.. and Ishihara. H. (1988). "Planar-structure InP/InGa-AsP/InGaAs avalanche photodiodes with preferential lateral extended guarding ring for 1.0-1.6 μm wavelength optical communication use," .J. Lightwave Technol. 6, pp. 1643-1655.
100. Takanashi, Y, and Horikoshi, Y. (1981). "Temperature dependence of ionization coefficients for InP and 1.3 μm InGaAsP avalanche photodiodes." Jpn. .J. Appl. Tins. 20, pp. 1907-1913.
101. Takanishi, Y. Kawashima, M., and Horikoshi, Y (1980). "Required donor concentration of epitaxial layers for efficient InGaAsP avalanche photodiodes." Jpn..J. Appl. Tins. 19, pp. 693-701.
102. Tarof. L. E. (1990). "Planar InP/lnGaAs avalanche photodetectors with n- multiplication layer exhibiting a very high gain-bandwidth product." IEEE Photon. Technol. Lett. PTE-2, pp. 643-646.
103. Tarof. L. E. (1991). "Planar InP/lnGaAs avalanche photodeteclor with a gain-bandwidth product in excess of 100 GHz," Electron. Lett. 27, pp. 34-35.
104. Tarof, L. E. (1993). "Separate absorption, grading, charge, and multiplication avalanche photodiodes," Ph.D. thesis, Carleton University, Ottawa.
105. Tarof. E. F... Knight, D. G" Fox, K. E., Miner, C. J., Puetz. N" and Kim, H. B. (1990). "Planar InP/-InGaAs avalanche photodiodes with partial charge sheet in device periphery," Appl. Phys. Lett. 57. pp. 670-672.
106. Tarof, L. E" Minor. C. J., and Blaauw, C. (1990). "Epitaxial layer thickness measurement of double structures using reflectance spectroscopy." J. Appl. Phys. 68. pp. 2927-2938.
107. Tarof. L. E.. Minor. C. J., and Spring Thorpe. A. J. (1989). "Epitaxial layer thickness measurement by relleclion spectroscopy." .J. Electronic materials 18, pp. 361-365.
108. Tarof, I.. E., Yu, .J.. Baird, T, Bruce. R., and Knight, D. G. (1993). "Temperature measurements of separate absorption grading, charge, and multiplication (SAGCM) InP/lnGaAs avalanche photodiodes (APDs)," IEEE Thoton. Technol. Lett.. PTL-5, pp. 1044-1046.
109. Tarof. I.. F... Yu. J., Bruce. R.. Knight, D. G" Baird, T. and Ooslerbrink, B. (1993). "High frequency performance of separate absorption grading, charge, and multiplication InP/lnGaAs avalanche photodiodes." IEEE Photon. Technol. Lett. PTL-5. pp. 672-674.
110. Tarof, L. E" Yu. J.. Bruce, R.. Knight, D. G" Baird. T. Visvanatha, K.. McGhan, D.. Emmerstorfer, B., Ma, C. L. F, Martian. C. M.. and Miner. C. .1. (1994). "Design and whole wafer performance of separate absorption, grading, charge, and multiplication InP/lnGaAs avalanche photodiodes," in SPIE Conj. Proc. 2149 Technol. Optical Communications, paper #34.
111. Tyagi. M. S. (1968). "Zener and avalanche breakdown in Silicon alloyed p-n junctions," Solid-Stale Electronics 23. pp. 99-128.
112. Umebu. I., Choudhur, A. N. M. M., and Robson, P. N. (1980). "Ionization coefficients measured in abrupt InP junctions," Appl. Phys. Lett. 36, pp. 302-303.
113. Webb, P. P., Mclntyre, R. J., and Conradi, J. (1974). "Properties of avalanche photodiodes," RCA Review 35, pp. 234-278.
114. Webb, P., Mclntyre, R. J. Scheibling, J., and Holunga, M. (1988). "Planar InGaAs/InP avalanche photo-diode fabrication using vapor-phase epitaxy and silicon implantation techniques," Proc. Opt. Fibre Commun. Conf. Tech. Series 1, pp. 129-130.
115. Webb. P. P., Mclntyre, R. J. Scheibling, J., and Holunga, M. (1988). "Planar InGaAs/lnP APD fabrication using VPE and Si implantation techniques," in Opt. Fibre Commun. Conf. 1988 Tech. Digest Series 1, p. 129.
116. Woods, M. H., Johnson, W. C, and Lampert, M. A. (1973). "Use of a Schottky barrier to measure impact ionization coefficients in semiconductors," Solid-Slate Electronics 16, pp. 381-394.
117. Yu, J., Tarof, L. E., Baird, T" McGhan, D., Bruce, R., and Knight, D. G. (1994). "Temperature measurements of separate absorption grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APDs)," in SPlE Conf. Proc. 2149, Techno!. Optical Communications, paper #35.
118. Yu. J.. Tarof, L. E.. Bruce, R., Knight, D. G.. Visvanatha K" and Baird, T. (1994). "Noise performance of separate absorption grading, charge, and multiplication InP/InGaAs avalanche photodiodes," IEEE Photon. Technol. Lett. PTL-6, pp. 632-634.
119. Zemel A., and Gallant. M. (1988). "Current-voltage characteristics of MOCVD InP/InGaAs p-i-n photodiodes: The influence of finite dimensions and heterointerfaces," J. Appl. Phys. 64, pp. 6552-6561.
120. Zhao, X.. Deen, M. J., and Tarof, L. (1 February 1996). "Low Frequency Noise in Separate Absorption. Grading, Charge and Multiplication (SAGCM) Avalanche Photodiodes." IEE Electronics Letters 32(3), pp. 250-252.
121. Zhu, Y" Deen, M. J., and Kleinpenning, T. M. (December 1992). "A New I/f Noise Model for Metal-Oxide-Semiconductor Field-Effect Transistors in Saturation and Deep Saturation," Journal of Applied Physics 72(12), pp. 5990-5998.