Two-dimensional gain profiles of InP/InGaAs separate absorption, grading, charge, and multiplication avalanche photodiodes modeled by a simplified stochastic approach

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 2, 2000, Pages 610-614

  Xiao, Yegao G ^a   Deen, M Jamal ^a,b  

^a SIMON FRASER UNIVERSITY   (Canada)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; ELECTRIC FIELDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS;

AVALANCHE PHOTODIODES; GAIN PROFILES; POISSON EQUATION; SEPARATE ABSORPTION GRADING CHARGE AND MULTIPLICATION; SIMPLIFIED STOCHASTIC APPROACH;

PHOTODIODES;

EID: 0034156274     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582236     Document Type: Article

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