Quantum-dot resonant-cavity separate absorption, charge, and multiplication avalanche photodiode operating at 1.06 μm

IEEE Photonics Technology Letters

Volumn 10, Issue 7, 1998, Pages 1009-1011

  Nie, H ^a   Baklenov, O ^a   Yuan, P ^a   Lenox, C ^a   Streetman, B G ^a   Campbell, J C ^a,b  

^a The University of Texas at Austin   (United States)

^b IEEE

Author keywords

Avalanche photodiode; Nd:YAG; Quantum dots; Resonant cavity

Indexed keywords

AVALANCHE DIODES; CAVITY RESONATORS; ELECTRIC BREAKDOWN OF SOLIDS; MOLECULAR BEAM EPITAXY; MONOLAYERS; NEODYMIUM LASERS; PHOTODETECTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM DOTS;

AVALANCHE PHOTODIODES;

PHOTODIODES;

EID: 0032121505     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.681300     Document Type: Article

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