Modeling of two-dimensional gain profiles for InP-InGaAs avalanche photodiodes with a stochastic approach

IEEE Journal of Quantum Electronics

Volumn 35, Issue 12, 1999, Pages 1853-1862

  Xiao, Yegao G ^b,c,d,e   Deen, M Jamal ^a,b,c  

^a IEEE

^b SIMON FRASER UNIVERSITY   (Canada)

^c MCMASTER UNIVERSITY   (Canada)

^d TSINGHUA UNIVERSITY   (China)

^e HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; ELECTRIC FIELD EFFECTS; OPTICAL COMMUNICATION; PHOTODETECTORS; RANDOM PROCESSES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS;

AVALANCHE PHOTODIODES;

PHOTODIODES;

EID: 0343475974     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.806597     Document Type: Article

References (29)

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