Effect of mesa overgrowth on low-frequency noise in planar separate absorption, grading, charge, and multiplication avalanche photodiodes

IEEE Journal of Quantum Electronics

Volumn 35, Issue 8, 1999, Pages 1196-1202

  An, Serguei ^a,b   Deen, M Jamal ^{a,b,c,d,e,f,g}   Vetter, A S ^b   Clark, W R ^b   Noel, J P ^b   Shepherd, F R ^b  

^a SIMON FRASER UNIVERSITY   (Canada)

^b NORTEL NETWORKS   (Canada)

^c CASE WESTERN RESERVE UNIVERSITY   (United States)

^d LEHIGH UNIVERSITY   (United States)

^e NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^f Phys of Semiconduct Devices Lab   (France)

^g MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); ANNEALING; COMPUTER CONTROL; DIELECTRIC MATERIALS; LOW TEMPERATURE OPERATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTODETECTORS; PHOTODIODES; SEMICONDUCTING SILICON COMPOUNDS; SPECTRUM ANALYZERS; SPURIOUS SIGNAL NOISE;

AVALANCHE PHOTODIODES; LOW FREQUENCY NOISE; NOISE MEASUREMENT;

AVALANCHE DIODES;

EID: 0343486343     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.777220     Document Type: Article

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