Investigation of the P-As substitution at GaAs/Ga0.51In0.49P interfaces by photoluminescence under pressure

Journal of Applied Physics

Volumn 89, Issue 7, 2001, Pages 3775-3782

  Aurand, A ^a   Leymarie, J ^a   Vasson, A ^a   Mesrine, M ^b   Massies, J ^b   Leroux, M ^b  

^a UNIVERSITÉ CLERMONT AUVERGNE   (France)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035308536     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1338520     Document Type: Article

References (41)

1. T. Kobayashi, K. Taira, F. Nakamura, and H. Kawai, J. Appl. Phys. 65, 4898 (1989).
2. M. J. Hafich, J. H. Quigley, R. E. Owens, G. Y. Robinson, D. Li, and N. Otsuka, Appl. Phys. Lett. 54, 2686 (1989).
3. M. Leroux, M. L. Fille, B. Gil, J. P. Landesmann, and J. C. Garcia, Phys. Rev. B 47, 6465 (1993).
4. M. S. Faleh, J. Tasselli, J. P. Bailbe, and A. Marty, Appl. Phys. Lett. 69, 1288 (1996).
5. M. Usami, Y. Matsushima, and Y. Takahashi, J. Cryst. Growth 150, 1344 (1995).
6. Z. C. Huang, B. Yang, H. K. Chen, and J. C. Chen, J. Vac. Sci. Technol. B 13, 2049 (1995).
7. J. C. Garcia, P. Maurel, P. Bove, and J. P. Hirtz, Jpn. J. Appl. Phys., Part 1 30, 1186 (1991).
8. T. Nittono, S. Sugitani, and F. Hyuga, J. Appl. Phys. 78, 5387 (1995).
9. H. Ikeda, Y. Miura, N. Takahashi, A. Koukitu, and H. Seki, Appl. Surf. Sci. 82/83, 257 (1994).
10. A. Y. Lew, C. H. Yan, R. B. Welstand, J. T. Zhu, C. W. Tu, P. K. L. Yu, and E. T. Yu, J. Electron. Mater. 26, 64 (1997).
11. S. Nagao, M. Takashima, Y. Inoue, M. Katoh, and H. Gotoh, J. Cryst. Growth 111, 521 (1991).
12. T. Anan, S. Sugou, and K. Nishi, Appl. Phys. Lett. 63, 1047 (1993).
13. T. Taki, T. Nakajima, A. Koukitu, and H. Seki, J. Cryst. Growth 183, 75 (1998).
14. M. Takemi, Y. Mihashi, T. Shiba, and M. Aiga, J. Cryst. Growth 191, 18 (1998).
15. M. Leroux, J. Leymarie, G. Méheut, and G. Neu, Rev. Sci. Instrum. 59, 772 (1988).
16. J. Leymarie, C. Monier, A. Vasson, A. M. Vasson, M. Leroux, B. Courboulès, N. Grandjean, C. Deparis, and J. Massies, Phys. Rev. B 51, 13274 (1995).
17. L. Viña, S. Logothetidis, and M. Cardona, Phys. Rev. B 30, 1979 (1984).
18. P. Lautenschlager, M. Garriga, S. Logothetidis, and M. Cardona, Phys. Rev. B 35, 9174 (1987).
19. S. H. Kwok, P. Y. Yu, K. Uchida, and T. Arai, Appl. Phys. Lett. 71, 1110 (1997).
20. D. J. Woolford, in Proceedings of the 18th International Conference on the Physics of Semiconductors, Stockholm, edited by O. Engstrom (World Scientific, Singapore, 1986), p. 1115.
21. J. Leymarie, M. Leroux, and G. Neu, Phys. Rev. B 42, 1482 (1990).
22. S. W. Tozer, D. J. Woolford, J. A. Bradley, D. Bour, and G. B. Stringfellow, in Proceedings of the 19th International Conference on the Physics of Semiconductors, Warsaw, edited by W. Zawadzki (Institute of Physics, Polish Academy of Sciences, Warsaw, 1988), p. 881.
23. K. Muraki, S. Fukatsu, Y. Shiraki, and R. Ito, Appl. Phys. Lett. 61, 557 (1992).
24. M. Mesrine, J. Massies, C. Deparis, N. Grandjean, E. Vanelle, and M. Leroux, J. Cryst. Growth 176, 1242 (1997).
25. E. Vanelle, M. Mesrine, N. Grandjean, C. Deparis, and J. Massies, Jpn. J. Appl. Phys., Part 1 37, 15 (1998).
26. M. Tabuchi, K. Fujibayashi, N. Yamada, Y. Takeda, and H. Kamei, J. Appl. Phys. 81, 112 (1997).
27. M. Tabuchi, K. Fujibayashi, N. Yamada, K. Hagiwara, A. Kobashi, T. Iguchi, Y. Takeda, and H. Kamei, J. Cryst. Growth 186, 48 (1998).
28. A. Aurand, J. Leymarie, A. Vasson, A. M. Vasson, M. Mesrine, C. Deparis, and M. Leroux, Thin Solid Films 336, 358 (1998).
29. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
30. K. H. Goetz, B. Bimberg, H. Jürgensen, J. Selders, A. V. Solomonov, G. F. Glinskii, and M. Razeghi, J. Appl. Phys. 54, 4543 (1983).
31. R. J. Nelson, N. Holonyak, Jr., and W. O. Groves, Phys. Rev. B 13, 5415 (1976).
32. M. Beaudoin, A. Bensaada, R. Leonelli, P. Desjardins, R. A. Masut, L. Isnard, and G. L'Espérance, Phys. Rev. B 53, 1990 (1996).
33. M. Zachau and W. T. Masselink, Appl. Phys. Lett. 60, 2098 (1992).
34. J. Leymarie, P. Disseix, M. Rezki, C. Monier, A. Vasson, and A. M. Vasson, Mater. Sci. Eng., B 44, 147 (1997).
35. P. Disseix, J. Leymarie, A. Vasson, A. M. Vasson, C. Monier, N. Grandjean, M. Leroux, and J. Massies, Phys. Rev. B 55, 2406 (1997).
36. K. Kodama, M. Hoshino, K. Kitahara, M. Takikawa, and M. Ozeki, Jpn. J. Appl. Phys., Part 2 25, L127 (1986).
37. J. Chen, J. R. Sites, I. L. Spain, M. J. Hafich, and G. Y. Robinson, Appl. Phys. Lett. 58, 744 (1991).
38. Y. Foulon, C. Priester, G. Allan, J. C. Garcia, and J. P. Landesmann, J. Vac. Sci. Technol. B 10, 1754 (1992).
39. A. D. Katnani and G. Margaritondo, Phys. Rev. B 28, 1944 (1983).
40. P. Disseix, J. Leymarie, A. Vasson, A. M. Vasson, H. Banvillet, E. Gil, N. Piffault, and R. Cadoret, Semicond. Sci. Technol. 8, 1666 (1993).
41. L. Samuelson, M. Gerling, X. Liu, S. Nilsson, P. Omling, M. E. Pistol, and P. Silverberg, in Proceedings of the 19th International Conference on the Physics of Semiconductors, Warsaw, edited by W. Zawadzki (Institute of Physics, Polish Academy of Sciences, Warsaw, 1988), p. 967.